Wide bandgap boost for renewables

Wide bandgap boost for renewables

Consequently, almost all efforts are on lateral high electron mobility transistors (HEMTsJ, which do not follow the model for vertical devices. The performance of these devices depends on reducing feature sizes, 2DEG contact resistance, and the drain drift length. This means high surface electric fi...

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Veröffentlicht in:Electronics Weekly 2011-10 (2484), p.10
1. Verfasser: Kinzer, Dan
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidths
Electronic switching systems
Electronics
Power supply
Silicon carbide
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Zusammenfassung:Consequently, almost all efforts are on lateral high electron mobility transistors (HEMTsJ, which do not follow the model for vertical devices. The performance of these devices depends on reducing feature sizes, 2DEG contact resistance, and the drain drift length. This means high surface electric fields are unavoidable to achieve low resistance and these devices are not able to withstand significant avalanche current.
ISSN:0013-5224