Rohm integrates driver with GaN hemt

Rohm has co-packaged a gate driver and a 650V GaN power transistor to ease the design of power supplies in servers and AC adaptors. "While GaN hemts are expected to contribute to greater miniaturisation and improved power conversion effi ciency, the diffi culty in handling the gate compared to silicon mosfets requires the use of a dedicated gate driver," according to the company. "In response, Rohm developed power stage ICs that integrate GaN hemts and gate drivers into a single package by leveraging core power and analogue technologies."