X-ray scattering from silicon surfaces
With the downscaling of integrated circuits, surface and interface roughness must be controlled to achieve those that are high-yielding. For roughness determination of high-quality surfaces and thickness control of ultrathin layers, some measurement equipment such as laser scattering, atomic force m...
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Veröffentlicht in: | Semiconductor international 1998-05, Vol.21 (5), p.81-86 |
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Hauptverfasser: | , , , , |
Format: | Magazinearticle |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | With the downscaling of integrated circuits, surface and interface roughness must be controlled to achieve those that are high-yielding. For roughness determination of high-quality surfaces and thickness control of ultrathin layers, some measurement equipment such as laser scattering, atomic force microscopy and ellipsometry is operating partly at its capability limits. X-ray scattering, which is a standard analytical method in basic search for the structure determination of thin layered solids, proves to be an innovative tool for surface and interface characterization. |
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ISSN: | 0163-3767 |