RTP-Grown Oxynitride Layers Meet Gate Challenges

RTP-Grown Oxynitride Layers Meet Gate Challenges

Information technology's progress over the past decades has depended on the Silicon dioxide/Silicon system's extremely high quality. One key application of this system is MOSFET gate dielectric. Until now, Silicon dioxode gate oxide played a critical role in device performance.1 As lateral...

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Veröffentlicht in:Semiconductor International 2004-09, Vol.27 (10), p.73
Hauptverfasser: Chung, H Y A, Niess, J, Dietl, W, Roters, G
Format: Magazinearticle
Sprache:eng
Schlagworte:
Aluminum
Nanotechnology
Silicon nitride
Silicon wafers
Studies
Surface mount technology
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Zusammenfassung:Information technology's progress over the past decades has depended on the Silicon dioxide/Silicon system's extremely high quality. One key application of this system is MOSFET gate dielectric. Until now, Silicon dioxode gate oxide played a critical role in device performance.1 As lateral MOSFET dimensions scale into the deep submicron regime (
ISSN:0163-3767