Synthesizing low-k CVD materials for fab use

At the 0.13 micrometer device generation, leading-edge companies are beginning to incorporate low-k dielectric films in their copper damascene interconnect structures. From the standpoint of complexity, the synthesis, purification and handling of a low-k CVD precursor is more difficult to prepare than TEOS, but is considerably less complex than spin-on low-k polymeric films. These new CVD low-k films are being prepared using a wide range of organically substituted silicon-based chemicals. The various synthesis techniques were shown, with a note to the advantages and disadvantages associated with each route.