High Photocurrent in Silicon Photoanodes Catalyzed by Iron Oxide Thin Films for Water Oxidation
Silicon splits: The application of silicon to water oxidation is limited due to unfavorable interface properties. However, these can be circumvented by using a high‐performance silicon photoanode with a catalytically active iron oxide thin film (see picture). This approach results in photocurrents a...
Gespeichert in:
Veröffentlicht in: | Angewandte Chemie International Edition 2012-01, Vol.51 (2), p.423-427 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Silicon splits: The application of silicon to water oxidation is limited due to unfavorable interface properties. However, these can be circumvented by using a high‐performance silicon photoanode with a catalytically active iron oxide thin film (see picture). This approach results in photocurrents as high as 17 mA cm−2 under 1 sun and zero overpotential conditions. |
---|---|
ISSN: | 1433-7851 1521-3773 |
DOI: | 10.1002/anie.201104367 |