Simulation of displacement damage for silicon avalanche photo-diodes

Simulation of displacement damage for silicon avalanche photo-diodes

The silicon avalanche photo-diodes (APDs) in the CMS barrel electromagnetic calorimeter will be exposed to an integrated neutron fluence of about 2 × 10 13 n / cm 2 over 10 years of operation. High neutron fluences change the electrical properties of silicon detectors. The changes are proportional t...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2011-12, Vol.658 (1), p.70-72
Hauptverfasser: KAe+/-lAe+/-&, ccedil, , Adnan, Pilicer, Ercan, Tapan, Ae degree lhan, Oezmutlu, Emin N
Format: Artikel
Sprache:eng
Schlagworte:
Accelerators
Avalanche photo-diode
Avalanches
Detectors
Electrical properties
Fluence
Geant4 simulation
Mathematical analysis
Radiation damage
Silicon
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Zusammenfassung:The silicon avalanche photo-diodes (APDs) in the CMS barrel electromagnetic calorimeter will be exposed to an integrated neutron fluence of about 2 × 10 13 n / cm 2 over 10 years of operation. High neutron fluences change the electrical properties of silicon detectors. The changes are proportional to the non-ionising energy loss in the APDs. Using the Geant4 toolkit, we have calculated the non-ionising energy loss as well as the rate of generation of primary defects in the APDs, for the expected neutron fluence.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2011.05.073