Instability of storage and temperature increment in nanopillars due to human body model electrostatic discharge

MRAM relevant to current induced magnetization switching (CIMS) is studied due to thermal increment caused by CIMS. In this paper, the instability of storage and the thermal increment caused by the transient current from the HBM ESD in nanopillars of MRAM are studied. We determine the voltage which can cause erroneous switching in MRAM by inducing CIMS. The finite element method is used to calculate the temperature increase caused by the discharge. Results indicate that this voltage is not sufficient to cause permanent physical or magnetic damage to MRAMs but only affects the reliability of the stored information. ► We firstly studied the effect of ESD transient current in MRAM. ► Human body model was used for investigation this effect. ► The error of magnetization switching in MRAM is caused by the ESD current. ► The current affects the storage reliability but it is not enough breakdown in MRAM.