A Single-Trim CMOS Bandgap Reference With a 3σ Inaccuracy of ±0.15% From ―40°C to 125°C
A CMOS bandgap reference with an inaccuracy of +/- 0.15% (3 sigma ) from - hbox 40 [compfn] hbox C to 125 [compfn] hbox C is presented. In contrast to prior art, it requires only a single trim to achieve this level of precision. A detailed analysis of the various error sources is provided, and techn...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2011-11, Vol.46 (11), p.2693-2701 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A CMOS bandgap reference with an inaccuracy of +/- 0.15% (3 sigma ) from - hbox 40 [compfn] hbox C to 125 [compfn] hbox C is presented. In contrast to prior art, it requires only a single trim to achieve this level of precision. A detailed analysis of the various error sources is provided, and techniques to reduce them are discussed. The prototype bandgap reference draws 55 mu hbox A from a 1.8 V supply, and occupies 0.12 hbox mm 2 in a 0.16 mu hbox m CMOS process. Experimental results from two runs show that, with the use of chopping and higher-order curvature correction to remove non-PTAT errors, the residual error of a bandgap reference is mainly PTAT, and can be removed by a single room temperature trim. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2011.2165235 |