A Single-Trim CMOS Bandgap Reference With a 3σ Inaccuracy of ±0.15% From ―40°C to 125°C

A CMOS bandgap reference with an inaccuracy of +/- 0.15% (3 sigma ) from - hbox 40 [compfn] hbox C to 125 [compfn] hbox C is presented. In contrast to prior art, it requires only a single trim to achieve this level of precision. A detailed analysis of the various error sources is provided, and techn...

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Veröffentlicht in:IEEE journal of solid-state circuits 2011-11, Vol.46 (11), p.2693-2701
Hauptverfasser: GUANG GE, CHENG ZHANG, HOOGZAAD, Gian, MAKINWA, Kofi A. A
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Sprache:eng
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Zusammenfassung:A CMOS bandgap reference with an inaccuracy of +/- 0.15% (3 sigma ) from - hbox 40 [compfn] hbox C to 125 [compfn] hbox C is presented. In contrast to prior art, it requires only a single trim to achieve this level of precision. A detailed analysis of the various error sources is provided, and techniques to reduce them are discussed. The prototype bandgap reference draws 55 mu hbox A from a 1.8 V supply, and occupies 0.12 hbox mm 2 in a 0.16 mu hbox m CMOS process. Experimental results from two runs show that, with the use of chopping and higher-order curvature correction to remove non-PTAT errors, the residual error of a bandgap reference is mainly PTAT, and can be removed by a single room temperature trim.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2011.2165235