Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond

With the 32 nm node in mass production, simulation tools have to include quantum effects to correctly describe the behavior of the devices. The Multi-Subband Ensemble Monte Carlo (MSB-EMC) approach constitutes today's most accurate method for the study of nanodevices with important applications to SOI devices. However, the study of bulk devices with MSB-EMC codes presents practical limitations arising from the device geometry and the existence of a semi-infinite quantum well. This work presents a in-depth study of such issues to properly apply the Multi-Subband approach to bulk devices. The developed simulator has been used to study bulk-nMOSFETs for the 32 nm technological node and beyond which still constitutes the mainstream technology in commercial ICs and to compare them to their SOI counterparts.