Adjustment of thermal hysteresis in epitaxial VO2 films by doping metal ions

Thermal hysteresises of electrical resistance, accompanying with a structural phase transition, in epitaxial VO2 films have been successfully reduced to 1°C or less by doping Ti or Nb ions. We considered that owing to the metal-ion-substitutive structural defects induced by doping metal ions into VO...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of the Ceramic Society of Japan 2011/07/01, Vol.119(1391), pp.577-580
Hauptverfasser: NISHIKAWA, Masami, NAKAJIMA, Tomohiko, KUMAGAI, Toshiya, OKUTANI, Takeshi, TSUCHIYA, Tetsuo
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Thermal hysteresises of electrical resistance, accompanying with a structural phase transition, in epitaxial VO2 films have been successfully reduced to 1°C or less by doping Ti or Nb ions. We considered that owing to the metal-ion-substitutive structural defects induced by doping metal ions into VO2 films, the structural phase transition easily occurred without superheating or supercooling. In Nb-doped VO2 films, the hysteresis disappeared at a lower doping level than Ti-doped VO2 films. The maximum values of the temperature coefficient of the resistance of V0.91Ti0.09O2 and V0.982Nb0.018O2 films, which exhibited non-hysteretic MI transitions, were −24.8%/°C at 46°C and −21.6%/°C at 19°C, respectively.
ISSN:1882-0743
1348-6535
DOI:10.2109/jcersj2.119.577