Temperature dependent in situ doping of ALD ZnO

This study on ALD grown ZnO layers is aimed at the systematic study of the effect of incorporation of different Al contents on the properties of the layers. An alternate precursor pulse method was used for layer deposition. Optimal doping was achieved at 210 °C at 2 at% Al content. A relationship be...

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Veröffentlicht in:	Journal of thermal analysis and calorimetry 2011-07, Vol.105 (1), p.93-99
Hauptverfasser:	Baji, Zs, Lábadi, Z., Horváth, Z. E., Fried, M., Szentpáli, B., Bársony, I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminium Aluminum Analytical Chemistry Chemistry Chemistry and Materials Science Cross-disciplinary physics: materials science rheology Crystal structure Deposition Dielectric films Doping Exact sciences and technology Inorganic Chemistry Materials science Measurement Science and Instrumentation Methods of deposition of films and coatings film growth and epitaxy Optimization Physical Chemistry Physics Polymer Sciences Precursors Thin films Zinc oxide
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Beschreibung
Zusammenfassung:	This study on ALD grown ZnO layers is aimed at the systematic study of the effect of incorporation of different Al contents on the properties of the layers. An alternate precursor pulse method was used for layer deposition. Optimal doping was achieved at 210 °C at 2 at% Al content. A relationship between crystalline morphology versus temperature and aluminium incorporation was established.
ISSN:	1388-6150 1588-2926 1572-8943
DOI:	10.1007/s10973-011-1641-3