III-Nitride QD Lasers

III-Nitride QD Lasers

III-Nitrides QD lasers are studied in detail. Two types of QD structures are considered, GaN/Al sub(xGa) sub(1)-xN/AlN and In sub(xGa) sub(1)-xN/ In sub(0.04Ga) sub(0).96N /GaN. Effects of: QD size; QD and WL composition; and doping are studied through the calculations of gain, threshold current, an...

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Veröffentlicht in:The open nanoscience journal 2009-01, Vol.3 (1), p.1-11
Hauptverfasser: Al-Husseini, H., Al-Khursan, Amin H., Al-Dabagh, S. Y.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Doping
Gallium nitrides
Lasers
Modulation
Nanocomposites
Nanomaterials
Nanostructure
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Zusammenfassung:III-Nitrides QD lasers are studied in detail. Two types of QD structures are considered, GaN/Al sub(xGa) sub(1)-xN/AlN and In sub(xGa) sub(1)-xN/ In sub(0.04Ga) sub(0).96N /GaN. Effects of: QD size; QD and WL composition; and doping are studied through the calculations of gain, threshold current, and intensity modulation bandwidth. It is shown that GaN QDs are less sensitive to size fluctuations. Bandwidth increases with doping and reducing QD size. The study covers approximately (300-600 nm) wavelength range.
ISSN:1874-1401
1874-1401
DOI:10.2174/1874140100903010001