Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central waveleng...

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Veröffentlicht in:Optics letters 2012-03, Vol.37 (6), p.1103-1105
Hauptverfasser: Haffouz, S, Barrios, P J, Normandin, R, Poitras, D, Lu, Z
Format: Artikel
Sprache:eng
Schlagworte:
Arsenicals - chemistry
Bandwidth
Devices
Indium - chemistry
Indium arsenides
Light
Light-emitting diodes
Luminescent Measurements - instrumentation
Noise levels
Quantum Dots
Sleds
Wavelengths
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Beschreibung
Zusammenfassung:An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.37.001103