Properties of CdSe single crystals activated with selenium by ion implantation
Selenium ion implantation has been used to produce p -type layers on cadmium selenide single crystals. Their conductivity is governed by acceptor levels at E ν + 0.05 eV and E ν + 0.32 eV, due to native point defects in the ion-implanted layer.
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Veröffentlicht in: | Inorganic materials 2009-06, Vol.45 (6), p.606-610 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Selenium ion implantation has been used to produce
p
-type layers on cadmium selenide single crystals. Their conductivity is governed by acceptor levels at
E
ν
+ 0.05 eV and
E
ν
+ 0.32 eV, due to native point defects in the ion-implanted layer. |
---|---|
ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168509060053 |