Properties of CdSe single crystals activated with selenium by ion implantation

Selenium ion implantation has been used to produce p -type layers on cadmium selenide single crystals. Their conductivity is governed by acceptor levels at E ν + 0.05 eV and E ν + 0.32 eV, due to native point defects in the ion-implanted layer.

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Inorganic materials 2009-06, Vol.45 (6), p.606-610
Hauptverfasser: Georgobiani, A. N., Levonovich, B. N.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Selenium ion implantation has been used to produce p -type layers on cadmium selenide single crystals. Their conductivity is governed by acceptor levels at E ν + 0.05 eV and E ν + 0.32 eV, due to native point defects in the ion-implanted layer.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168509060053