An improved hydrodynamic model describing heat generation and transport in submicron silicon devices

An hydrodynamic model for electron and phonon transport in silicon semiconductors has been formulated, on the basis of the Maximum Entropy Principle, in order to describe off-equilibrium phenomena in submicron silicon devices.

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of computational electronics 2008-09, Vol.7 (3), p.142-145
Hauptverfasser:	Muscato, O., Di Stefano, V., Milazzo, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Computational fluid dynamics Condensed matter: structure, mechanical and thermal properties Electrical Engineering Engineering Exact sciences and technology Fluid flow Heat generation Hydrodynamics Mathematical and Computational Engineering Mathematical and Computational Physics Mathematical models Maximum entropy Mechanical Engineering Nonelectronic thermal conduction and heat-pulse propagation in solids thermal waves Optical and Electronic Materials Physics Semiconductors Silicon devices Theoretical Transport Transport properties of condensed matter (nonelectronic)
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Beschreibung
Zusammenfassung:	An hydrodynamic model for electron and phonon transport in silicon semiconductors has been formulated, on the basis of the Maximum Entropy Principle, in order to describe off-equilibrium phenomena in submicron silicon devices.
ISSN:	1569-8025 1572-8137
DOI:	10.1007/s10825-008-0252-0