A new test methodology for an exhaustive study of single-event-effects on power MOSFETs

A new test methodology for the analysis of SEE in power MOSFET is presented. It is based on the combined use of an Ion Electron Emission Microscope (IEEM) and an experimental set-up which is able to acquire the drain signals associated to the impacts during the irradiation. The charge generation sen...

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Veröffentlicht in:	Microelectronics and reliability 2011-09, Vol.51 (9-11), p.1995-1998
Hauptverfasser:	Busatto, G., Bisello, D., Currò, G., Giubilato, P., Iannuzzo, F., Mattiazzo, S., Pantano, D., Sanseverino, A., Silvestrin, L., Tessaro, M., Velardi, F., Wyss, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Charge Correlation Devices Drains Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Methodology Microelectronics Microscopes MOSFETs Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Beschreibung
Zusammenfassung:	A new test methodology for the analysis of SEE in power MOSFET is presented. It is based on the combined use of an Ion Electron Emission Microscope (IEEM) and an experimental set-up which is able to acquire the drain signals associated to the impacts during the irradiation. The charge generation sensitivity map of a 200V power MOSFET has been measured. It indicates the areas where the impacting particles generate the maximum charge. This map is strictly correlated with the sensitivity map of the device to SEB.
ISSN:	0026-2714 1872-941X
DOI:	10.1016/j.microrel.2011.07.023