MOSFET with a boron-loaded gate as a low-energy neutron dosimeter

MOSFET with a boron-loaded gate as a low-energy neutron dosimeter

A MOSFET-based low-energy neutron dosimeter has been fabricated using a 10B loaded gate electrode as ( n, α) converter. The response to thermal neutrons has been studied. ► Feasibility of a metal–oxide–semiconductor thermal neutron dosimeter is investigated. ► Monolithically integrated boron-loaded...

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Veröffentlicht in:Radiation physics and chemistry (Oxford, England : 1993) England : 1993), 2011-12, Vol.80 (12), p.1437-1440
Hauptverfasser: Gavelle, M., Sarrabayrouse, G., Scheid, E., Siskos, S., Fragopoulou, M., Zamani, M.
Format: Artikel
Sprache:eng
Schlagworte:
Boron-loaded converter
Converters
Electrodes
Gates
MOS radiation dosimeter
MOSFETs
Neutron dosimeters
Neutron dosimetry
Thermal neutrons
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Zusammenfassung:A MOSFET-based low-energy neutron dosimeter has been fabricated using a 10B loaded gate electrode as ( n, α) converter. The response to thermal neutrons has been studied. ► Feasibility of a metal–oxide–semiconductor thermal neutron dosimeter is investigated. ► Monolithically integrated boron-loaded gate electrode acts as a ( n, α) converter. ► Sensitivity of 2 V/Sv is obtained.
ISSN:0969-806X
1879-0895
DOI:10.1016/j.radphyschem.2011.08.001