Preparation and characterization of In2S3 semiconductor thin films using the sol–gel method

This study describes the In 2 S 3 semiconductor thin film coating on glass substrate by sol–gel method. The In 2 S 3 thin film samples were prepared and examined by the X-ray diffraction (XRD), the UV–visible optical absorption and transmission study, and the Scanning Electron Microscope (SEM) image analyses. The XRD analysis results show that the In 2 S 3 semiconductor thin films prepared by sol–gel method is formed at T~360–520 °C temperature interval. Band gap energy and optical absorption spectrum analysis of the In 2 S 3 thin films reveal that Eg~2.51 eV for the In 2 S 3 thin films. According to the EDX result the film was In -rich with the In / S = 1.42 ratio. The thickness of prepared In 2 S 3 layer is about 400 nm.