Atomistic modeling of hole transport in ultra-thin body SOI pMOSFETs

Atomistic hole transport simulation based on a nonequilibrium Green’s function method and tight-binding approximation has been performed for four types of ultra-thin double-gate silicon-on-insulator MOSFETs; (i) 〈100〉 channel device on (100) substrate, (ii) 〈110〉 channel device on (100) substrate, (iii) 〈100〉 channel device on (110) substrate, and (iv) 〈110〉 channel device on (110) substrate. Simulation results show that the difference in crystalline orientation of the devices greatly affects ballistic hole current due to a strong confinement-induced mixing of heavy- and light-hole states.