Growth of homogeneous polycrystalline Si1-xGex and Mg2Si1-xGex for thermoelectric application

Homogeneous polycrystalline Si1-xGex were grown using a Si(seed)/Ge/Si(feed) sandwich structure under the low temperature gradient less than 0.4 degree C/mm. It was found that the composition of the Si1-xGex was controlled by the growth temperature. The homogeneous Mg2Si1-xGex was synthesized by hea...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 2011-10, Vol.519 (24), p.8532-8537
Hauptverfasser:	HAYAKAWA, Yasuhiro, ARIVANANDHAN, Mukannan, BHATTACHARYA, Shovit, ASWAL, Dinesh Kumar, BABU, Sridharan Moorthy, INATOMI, Yuko, TATSUOKA, Hirokazu, SAITO, Yosuke, KOYAMA, Tadanobu, MOMOSE, Yoshimi, IKEDA, Hiroya, TANAKA, Akira, WEN, Cuilian, KUBOTA, Yoshihiro, NAKAMURA, Tamotsu
Format:	Artikel
Sprache:	eng
Schlagworte:	Coefficients Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Density Electrical properties of specific thin films Electrical resistivity Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Germanium Growth from solutions Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Silicon Spark plasma sintering Theory and models of film growth Thermoelectric effects Thermoelectricity Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Homogeneous polycrystalline Si1-xGex were grown using a Si(seed)/Ge/Si(feed) sandwich structure under the low temperature gradient less than 0.4 degree C/mm. It was found that the composition of the Si1-xGex was controlled by the growth temperature. The homogeneous Mg2Si1-xGex was synthesized by heat treatment of the homogeneous Si1-xGex powders under Mg vapor. The Mg2Si1-xGex sample with the relative density of 95% was synthesized by spark plasma sintering technique. The resistivity and the Seebeck coefficient of the Si, Ge, Si1-xGex and Mg2Si1-xGex samples were evaluated as a function of temperature. It indicated that Seebeck coefficients of the Si1-xGex and Mg2Si1-xGex samples were higher than those of Si and Ge. Moreover, the Seebeck coefficient of Mg2Si0.7Ge0.3 sample was higher than that of Mg2Si0.5Ge0.5 and Si0.5Ge0.5 samples.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2011.05.033