Separation of trace amounts of Ga and Ge in aqueous solution using nano-particles micro-column

A simple and rapid analytical method for the separation of trace amounts of gallium and germanium from aqueous solution by solid-phase extraction with nano-particles was developed. It was found that only Ga(III) could be quantitatively retained on nano-SiO(2) in the pH range of 3-4 and 8-12 while Ge...

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Veröffentlicht in:Talanta (Oxford) 2011-10, Vol.85 (5), p.2463-2469
Hauptverfasser: Zhang, Lei, Guo, Xingjia, Li, Hongmei, Yuan, Zhu, Liu, Xueyan, Xu, Tianci
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Sprache:eng
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Zusammenfassung:A simple and rapid analytical method for the separation of trace amounts of gallium and germanium from aqueous solution by solid-phase extraction with nano-particles was developed. It was found that only Ga(III) could be quantitatively retained on nano-SiO(2) in the pH range of 3-4 and 8-12 while Ge(IV) was not adsorbed, but both Ga(III) and Ge(IV) ions could be adsorbed quantitatively on nano-TiO(2) within the pH range of 4-11. These two ions adsorbed by nano-particles could be desorbed quantitatively. Effects of acidity, concentration of elution solution and interfering ions on the recovery of the analytes were systematically investigated. The sorption data could be well interpreted by the Langmuir model. Based on the Langmuir model equation, the monolayer adsorption capacity of nano-SiO(2)/nano-TiO(2) was calculated to be 4.26 mg g(-1)/19.68 mg g(-1) for Ga(III)/Ge(IV). Moreover, thermodynamic functions, the change of free energy (ΔG(0)), enthalpy (ΔH(0)) and entropy (ΔS(0)) of the adsorption reaction were estimated for each metal ion. Experimental data were also evaluated in terms of kinetic characteristics of adsorption and the adsorption process for both metal ions followed well pseudo-second-order kinetics. Finally, the proposed method was applied to the determination of trace Ga(III) and Ge(IV) in some water samples using loaded nano-particles columns, and it is found that the recoveries of Ga(III) and Ge(IV) were obtained to be in the range of 96.4-105.0%. And the method was validated with certified reference material (GBW07311, GBW 07406) and the values obtained for Ga(III) and Ge(IV) were in good agreement with the certified values.
ISSN:0039-9140
1873-3573
DOI:10.1016/j.talanta.2011.07.096