High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

For the first time, a graded etched junction termination extension (JTE) is applied to completed 4H-SiC gate turn-off thyristors. These devices demonstrate the feasibility of nonimplanted high-voltage SiC thyristors. The maximal measured forward breakdown voltage of 7.8 kV corresponds very well to t...

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Veröffentlicht in:IEEE electron device letters 2011-10, Vol.32 (10), p.1421-1423
Hauptverfasser: Paques, G., Scharnholz, S., Dheilly, N., Planson, D., De Doncker, R. W.
Format: Artikel
Sprache:eng
Schlagworte:
Anodes
Applied sciences
Breakdown
Current measurement
Devices
Electric power
Electronics
Engineering Sciences
Etching
Exact sciences and technology
Gate turn-off (GTO)
ion implantation
Logic gates
Mathematical analysis
Microelectronic fabrication (materials and surfaces technology)
Optimization
Other multijunction devices. Power transistors. Thyristors
reactive ion etching
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
silicon carbide (SiC)
termination
thyristor
Thyristors
Uncertainty
Voltage
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Beschreibung
Zusammenfassung:For the first time, a graded etched junction termination extension (JTE) is applied to completed 4H-SiC gate turn-off thyristors. These devices demonstrate the feasibility of nonimplanted high-voltage SiC thyristors. The maximal measured forward breakdown voltage of 7.8 kV corresponds very well to the ideal value of 8.1 kV. This letter explains the conceptual procedure to realize an optimal four-step JTE and compares measurement results with those obtained from finite-element simulations.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2163055