Performance improvement of Sb2Te3 phase change material by Al doping

Al doped Sb2Te3 material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb2Te3 films increase markedly with the increasing of Al concentration. The additional Al-Sb and Al-Te bonds enhance the...

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Veröffentlicht in:	Applied surface science 2011-10, Vol.257 (24), p.10667-10670
Hauptverfasser:	Peng, Cheng, Wu, Liangcai, Song, Zhitang, Rao, Feng, Zhu, Min, Li, Xuelai, Liu, Bo, Cheng, Limin, Feng, Songlin, Yang, Pingxiong, Chu, Junhao
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Amorphous materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystallization Electric potential Electrical resistance Exact sciences and technology Performance enhancement Physics Surface chemistry Voltage
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Zusammenfassung:	Al doped Sb2Te3 material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb2Te3 films increase markedly with the increasing of Al concentration. The additional Al-Sb and Al-Te bonds enhance the amorphous thermal stability of the material. Al0.69Sb2Te3 material has a better data retention (10 years at 110 degree C) than that of Ge2Sb2Te5 material (10 years at 87 degree C). With a 100ns width voltage pulse, SET and RESET voltages of 1.3 and 3.3V are achieved for the Al0.69Sb2Te3 based device.
ISSN:	0169-4332 1873-5584
DOI:	10.1016/j.apsusc.2011.07.072