Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode
A novel lateral insulated-gate bipolar transistor (LIGBT) structure on an silicon-on-insulator (SOI) substrate is proposed and discussed. The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and...
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| Veröffentlicht in: | IEEE electron device letters 2010-05, Vol.31 (5), p.467-469 |
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| creator | Chen, Wensuo Zhang, Bo Li, Zhaoji |
| description | A novel lateral insulated-gate bipolar transistor (LIGBT) structure on an silicon-on-insulator (SOI) substrate is proposed and discussed. The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and what is more, during turn- off state, there are two effective paths for electron extraction, and the switching speed is very fast. As simulation results show, without sacrificing the high current-handling capability, the ratios of turn-off times for the proposed structure compared to that of the segment-anode-n-p-n-LIGBT presented earlier and the conventional LIGBT are 1 : 1.57 and 1 : 35.58, respectively. Due to the 3-D anode structure, the proposed device has efficient area usage and can be fabricated by the conventional SOI high-voltage IC process, so it is a promising device used in power ICs. |
| doi_str_mv | 10.1109/LED.2010.2043638 |
| format | Article |
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The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and what is more, during turn- off state, there are two effective paths for electron extraction, and the switching speed is very fast. As simulation results show, without sacrificing the high current-handling capability, the ratios of turn-off times for the proposed structure compared to that of the segment-anode-n-p-n-LIGBT presented earlier and the conventional LIGBT are 1 : 1.57 and 1 : 35.58, respectively. Due to the 3-D anode structure, the proposed device has efficient area usage and can be fabricated by the conventional SOI high-voltage IC process, so it is a promising device used in power ICs.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2010.2043638</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>3-D n-region-controlled anode ; Anodes ; Conduction ; Devices ; Electrons ; Extraction ; Forward drop ; Insulated gate bipolar transistors ; Insulation ; Integrated circuits ; negative differential resistance (NDR) ; Power integrated circuits ; segment-anode-n-p-n-LIGBT (SA-NPN-LIGBT) ; shorted-anode lateral insulated-gate bipolar transistor (SA-LIGBT) ; Silicon on insulator technology ; Simulation ; Substrates ; Switches ; Switching ; Three dimensional ; turn- off time ; Voltage</subject><ispartof>IEEE electron device letters, 2010-05, Vol.31 (5), p.467-469</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) May 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c356t-4414b2de5df0c0e546ff52612ec5d37942f98e6f19638504b3be8440ca9b43863</citedby><cites>FETCH-LOGICAL-c356t-4414b2de5df0c0e546ff52612ec5d37942f98e6f19638504b3be8440ca9b43863</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5437262$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27922,27923,54756</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5437262$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, Wensuo</creatorcontrib><creatorcontrib>Zhang, Bo</creatorcontrib><creatorcontrib>Li, Zhaoji</creatorcontrib><title>Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A novel lateral insulated-gate bipolar transistor (LIGBT) structure on an silicon-on-insulator (SOI) substrate is proposed and discussed. The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and what is more, during turn- off state, there are two effective paths for electron extraction, and the switching speed is very fast. As simulation results show, without sacrificing the high current-handling capability, the ratios of turn-off times for the proposed structure compared to that of the segment-anode-n-p-n-LIGBT presented earlier and the conventional LIGBT are 1 : 1.57 and 1 : 35.58, respectively. Due to the 3-D anode structure, the proposed device has efficient area usage and can be fabricated by the conventional SOI high-voltage IC process, so it is a promising device used in power ICs.</description><subject>3-D n-region-controlled anode</subject><subject>Anodes</subject><subject>Conduction</subject><subject>Devices</subject><subject>Electrons</subject><subject>Extraction</subject><subject>Forward drop</subject><subject>Insulated gate bipolar transistors</subject><subject>Insulation</subject><subject>Integrated circuits</subject><subject>negative differential resistance (NDR)</subject><subject>Power integrated circuits</subject><subject>segment-anode-n-p-n-LIGBT (SA-NPN-LIGBT)</subject><subject>shorted-anode lateral insulated-gate bipolar transistor (SA-LIGBT)</subject><subject>Silicon on insulator technology</subject><subject>Simulation</subject><subject>Substrates</subject><subject>Switches</subject><subject>Switching</subject><subject>Three dimensional</subject><subject>turn- off time</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90U1Lw0AQBuBFFKzVu-Al4EEvW_djdpMca78sBgSteAzbZFZT0qTupgf_vVtbPHjwNAw8M8PwEnLJ2YBzlt5lk_FAsNAJBlLL5Ij0uFIJZUrLY9JjMXAqOdOn5Mz7FWMcIIYeeRw6NHRibVVU2HTR1PiOvmwQyygzHTpTR_PZ_SJ6q7qPyESSjqOGPuN71TZ01Dada-s62GHTlnhOTqypPV4cap-8TieL0QPNnmbz0TCjhVS6owAclqJEVVpWMFSgrVVCc4GFKmWcgrBpgtryNLyhGCzlEhMAVph0CTLRsk9u9ns3rv3cou_ydeULrGvTYLv1eSq0ZAA_8vZfySVXOuaxFoFe_6Grduua8EfOmQgGtEyDYntVuNZ7hzbfuGpt3FdA-S6HPOSQ73LIDzmEkav9SIWIv1yBjEU4-w2gT38I</recordid><startdate>201005</startdate><enddate>201005</enddate><creator>Chen, Wensuo</creator><creator>Zhang, Bo</creator><creator>Li, Zhaoji</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>201005</creationdate><title>Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode</title><author>Chen, Wensuo ; Zhang, Bo ; Li, Zhaoji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c356t-4414b2de5df0c0e546ff52612ec5d37942f98e6f19638504b3be8440ca9b43863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>3-D n-region-controlled anode</topic><topic>Anodes</topic><topic>Conduction</topic><topic>Devices</topic><topic>Electrons</topic><topic>Extraction</topic><topic>Forward drop</topic><topic>Insulated gate bipolar transistors</topic><topic>Insulation</topic><topic>Integrated circuits</topic><topic>negative differential resistance (NDR)</topic><topic>Power integrated circuits</topic><topic>segment-anode-n-p-n-LIGBT (SA-NPN-LIGBT)</topic><topic>shorted-anode lateral insulated-gate bipolar transistor (SA-LIGBT)</topic><topic>Silicon on insulator technology</topic><topic>Simulation</topic><topic>Substrates</topic><topic>Switches</topic><topic>Switching</topic><topic>Three dimensional</topic><topic>turn- off time</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Wensuo</creatorcontrib><creatorcontrib>Zhang, Bo</creatorcontrib><creatorcontrib>Li, Zhaoji</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Wensuo</au><au>Zhang, Bo</au><au>Li, Zhaoji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2010-05</date><risdate>2010</risdate><volume>31</volume><issue>5</issue><spage>467</spage><epage>469</epage><pages>467-469</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A novel lateral insulated-gate bipolar transistor (LIGBT) structure on an silicon-on-insulator (SOI) substrate is proposed and discussed. The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and what is more, during turn- off state, there are two effective paths for electron extraction, and the switching speed is very fast. As simulation results show, without sacrificing the high current-handling capability, the ratios of turn-off times for the proposed structure compared to that of the segment-anode-n-p-n-LIGBT presented earlier and the conventional LIGBT are 1 : 1.57 and 1 : 35.58, respectively. Due to the 3-D anode structure, the proposed device has efficient area usage and can be fabricated by the conventional SOI high-voltage IC process, so it is a promising device used in power ICs.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2010.2043638</doi><tpages>3</tpages></addata></record> |
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| issn | 0741-3106 1558-0563 |
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| subjects | 3-D n-region-controlled anode Anodes Conduction Devices Electrons Extraction Forward drop Insulated gate bipolar transistors Insulation Integrated circuits negative differential resistance (NDR) Power integrated circuits segment-anode-n-p-n-LIGBT (SA-NPN-LIGBT) shorted-anode lateral insulated-gate bipolar transistor (SA-LIGBT) Silicon on insulator technology Simulation Substrates Switches Switching Three dimensional turn- off time Voltage |
| title | Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode |
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