A 5-6 GHz SiGe HBT monolithic active isolator for improving reverse isolation in wireless systems

A monolithic active isolator combining common-base and common-collector configurations of SiGe heterojunction bipolar transistors (HBT) is used to improve reverse isolation in wireless system applications. This simple active isolator results in an insertion loss of 2 dB and input IP3 of +0.7 dBm ove...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2005-04, Vol.15 (4), p.220-222
Hauptverfasser:	Jongsoo Lee, Cressler, J.D., Joseph, A.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuits Core loss Design. Technologies. Operation analysis. Testing Electric circuits Electronics Exact sciences and technology Ferrites Germanium silicon alloys Heterojunction bipolar transistors Insertion loss Integrated circuits Isolation technology Isolators Loss measurement Magnetic materials Microwaves Monolithic active isolator Noise levels reverse isolation Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe heterojunction bipolar transistor (HBT) Silicon germanides Silicon germanium
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Beschreibung
Zusammenfassung:	A monolithic active isolator combining common-base and common-collector configurations of SiGe heterojunction bipolar transistors (HBT) is used to improve reverse isolation in wireless system applications. This simple active isolator results in an insertion loss of 2 dB and input IP3 of +0.7 dBm over 5-6 GHz with a 1.8-mA current flow for the core circuit of a 3-V supply.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2005.845696