Properties of r.f. sputtered cadmium telluride thin films
CdTe thin films were prepared using RF magnetron sputtering in an Ar atmosphere. Substrate temperatures in the range 100-320 C were used. XRD results showed that the films are amorphous below 200 C while above 200 C the firms were polycrystalline with cubic structure and grains preferentially orient...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2003, Vol.14 (1), p.21-26 |
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| creator | MARAFI, M EL AKKAD, F PRADEEP, B |
| description | CdTe thin films were prepared using RF magnetron sputtering in an Ar atmosphere. Substrate temperatures in the range 100-320 C were used. XRD results showed that the films are amorphous below 200 C while above 200 C the firms were polycrystalline with cubic structure and grains preferentially oriented along the [1 1 1] crystallographic direction. SEM measurements showed significant enhancement of crystallite size with increase of T(s) or with post-preparation annealing above 400 C. The 5 K photoluminescence spectrum showed a broad (FWHM = 80 meV) band with a maximum at 1.538 eV. This band showed significant narrowing after annealing above 400 C, suggesting that it originates from transitions involving grain boundary defects. The refractive index n was determined from the interference pattern of the optical transmission. The results agree with the values of n calculated using the Jensen theory. |
| doi_str_mv | 10.1023/A:1021571430682 |
| format | Article |
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Substrate temperatures in the range 100-320 C were used. XRD results showed that the films are amorphous below 200 C while above 200 C the firms were polycrystalline with cubic structure and grains preferentially oriented along the [1 1 1] crystallographic direction. SEM measurements showed significant enhancement of crystallite size with increase of T(s) or with post-preparation annealing above 400 C. The 5 K photoluminescence spectrum showed a broad (FWHM = 80 meV) band with a maximum at 1.538 eV. This band showed significant narrowing after annealing above 400 C, suggesting that it originates from transitions involving grain boundary defects. The refractive index n was determined from the interference pattern of the optical transmission. The results agree with the values of n calculated using the Jensen theory.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1023/A:1021571430682</identifier><language>eng</language><publisher>Norwell, MA: Springer</publisher><subject>Annealing ; Band spectra ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystal defects ; Deposition by sputtering ; Energy transmission ; Energy use ; Exact sciences and technology ; Grain size ; Ii-vi semiconductors ; Impurities ; Magnetron sputtering ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics ; Solar energy ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Thin films</subject><ispartof>Journal of materials science. 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Materials in electronics</title><description>CdTe thin films were prepared using RF magnetron sputtering in an Ar atmosphere. Substrate temperatures in the range 100-320 C were used. XRD results showed that the films are amorphous below 200 C while above 200 C the firms were polycrystalline with cubic structure and grains preferentially oriented along the [1 1 1] crystallographic direction. SEM measurements showed significant enhancement of crystallite size with increase of T(s) or with post-preparation annealing above 400 C. The 5 K photoluminescence spectrum showed a broad (FWHM = 80 meV) band with a maximum at 1.538 eV. This band showed significant narrowing after annealing above 400 C, suggesting that it originates from transitions involving grain boundary defects. The refractive index n was determined from the interference pattern of the optical transmission. The results agree with the values of n calculated using the Jensen theory.</description><subject>Annealing</subject><subject>Band spectra</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal defects</subject><subject>Deposition by sputtering</subject><subject>Energy transmission</subject><subject>Energy use</subject><subject>Exact sciences and technology</subject><subject>Grain size</subject><subject>Ii-vi semiconductors</subject><subject>Impurities</subject><subject>Magnetron sputtering</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><subject>Solar energy</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqFkD1LBDEQhoMoeJ7WtougVntm8rWJ3XH4BQdaKNgt2c0s5tiPM9kt_PdGvMrCqx4GnnmZeQk5B7oAyvjN8jYBZAGCU6XZAZmlgedCs_dDMqNGFrmQjB2Tkxg3lFIluJ4R8xKGLYbRY8yGJguLZpHF7TSOGNBltXWdn7psxLadgneYjR--zxrfdvGUHDW2jXi245y83d-9rh7z9fPD02q5zmuuYcyrKgEUKqwZpZphBdIiaJSVaYStnOG8xoIjSOcalZYMOgChnABLmeJzcv2buw3D54RxLDsf63SQ7XGYYmmYYoUxQJN59a_JTPpaSb1f1EXBU437xcIIoOYn8eKPuBmm0KdeSq2F1koLk6TLnWRjbdsm2L72sdwG39nwVYKQEowW_BtLSIrd</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>MARAFI, M</creator><creator>EL AKKAD, F</creator><creator>PRADEEP, B</creator><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><scope>7U5</scope><scope>H8D</scope><scope>7QQ</scope></search><sort><creationdate>2003</creationdate><title>Properties of r.f. sputtered cadmium telluride thin films</title><author>MARAFI, M ; EL AKKAD, F ; PRADEEP, B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-bb38116e6ec20082eb15ae18e5b9f4abd933ce73e15ddf6c389ed1146d41a0263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Annealing</topic><topic>Band spectra</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal defects</topic><topic>Deposition by sputtering</topic><topic>Energy transmission</topic><topic>Energy use</topic><topic>Exact sciences and technology</topic><topic>Grain size</topic><topic>Ii-vi semiconductors</topic><topic>Impurities</topic><topic>Magnetron sputtering</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><topic>Solar energy</topic><topic>Structure and morphology; 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MARAFI, M</au><au>EL AKKAD, F</au><au>PRADEEP, B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Properties of r.f. sputtered cadmium telluride thin films</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><date>2003</date><risdate>2003</risdate><volume>14</volume><issue>1</issue><spage>21</spage><epage>26</epage><pages>21-26</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>CdTe thin films were prepared using RF magnetron sputtering in an Ar atmosphere. Substrate temperatures in the range 100-320 C were used. XRD results showed that the films are amorphous below 200 C while above 200 C the firms were polycrystalline with cubic structure and grains preferentially oriented along the [1 1 1] crystallographic direction. SEM measurements showed significant enhancement of crystallite size with increase of T(s) or with post-preparation annealing above 400 C. The 5 K photoluminescence spectrum showed a broad (FWHM = 80 meV) band with a maximum at 1.538 eV. This band showed significant narrowing after annealing above 400 C, suggesting that it originates from transitions involving grain boundary defects. The refractive index n was determined from the interference pattern of the optical transmission. The results agree with the values of n calculated using the Jensen theory.</abstract><cop>Norwell, MA</cop><pub>Springer</pub><doi>10.1023/A:1021571430682</doi><tpages>6</tpages></addata></record> |
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| subjects | Annealing Band spectra Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal defects Deposition by sputtering Energy transmission Energy use Exact sciences and technology Grain size Ii-vi semiconductors Impurities Magnetron sputtering Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Solar energy Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films |
| title | Properties of r.f. sputtered cadmium telluride thin films |
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