Properties of r.f. sputtered cadmium telluride thin films
CdTe thin films were prepared using RF magnetron sputtering in an Ar atmosphere. Substrate temperatures in the range 100-320 C were used. XRD results showed that the films are amorphous below 200 C while above 200 C the firms were polycrystalline with cubic structure and grains preferentially orient...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2003, Vol.14 (1), p.21-26 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | CdTe thin films were prepared using RF magnetron sputtering in an Ar atmosphere. Substrate temperatures in the range 100-320 C were used. XRD results showed that the films are amorphous below 200 C while above 200 C the firms were polycrystalline with cubic structure and grains preferentially oriented along the [1 1 1] crystallographic direction. SEM measurements showed significant enhancement of crystallite size with increase of T(s) or with post-preparation annealing above 400 C. The 5 K photoluminescence spectrum showed a broad (FWHM = 80 meV) band with a maximum at 1.538 eV. This band showed significant narrowing after annealing above 400 C, suggesting that it originates from transitions involving grain boundary defects. The refractive index n was determined from the interference pattern of the optical transmission. The results agree with the values of n calculated using the Jensen theory. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1023/A:1021571430682 |