Lattice mismatch and surface morphology studies of In sub( x)Ga sub(1-x)As epilayers grown on GaAs substrates

In sub(x)Ga sub(1-x)As (0.06 less than or equal to x less than or equal to 0.35) epilayers were grown on GaAs substrates by atmospheric pressure metal organic chemical vapour deposition technique. Surface morphology and lattice mismatch in the InGaAs/GaAs films of different compositions were studied...

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Veröffentlicht in:	Bulletin of materials science 1998-08, Vol.21 (4), p.313-316
Hauptverfasser:	Pal, R, Singh, M, Murlidharan, R, Agarwal, S K, Pal, D, Bose, D N
Format:	Artikel
Sprache:	eng
Schlagworte:	Atmospheric pressure Barometric pressure Chemical vapor deposition Gallium arsenide Gallium arsenides Indium gallium arsenides Lattices Morphology
Online-Zugang:	Volltext
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