Lattice mismatch and surface morphology studies of In sub( x)Ga sub(1-x)As epilayers grown on GaAs substrates

In sub(x)Ga sub(1-x)As (0.06 less than or equal to x less than or equal to 0.35) epilayers were grown on GaAs substrates by atmospheric pressure metal organic chemical vapour deposition technique. Surface morphology and lattice mismatch in the InGaAs/GaAs films of different compositions were studied. Cross-hatched patterns were observed on the surface of the epilayers for bulk alloy composition up to x approximately 0.25. For x>0.3, a rough textured surface morphology was observed.