SiC fibre by chemical vapour deposition on tungsten filament

A CVD system for the production of continuous SiC fibre was set up. The process of SiC coating on 19 mu m diameter tungsten substrate was studied. Methyl trichloro silane (CH sub(3)SiCl sub(3)) and hydrogen reactants were used. Effect of substrate temperature (1300-1500 degree C) and concentration of reactants on the formation of SiC coating were studied. SiC coatings of negligible thickness were formed at very low flow rates of hydrogen (5 x 10 super(-5) m super(3)/min) and CH sub(3)SiCl sub(3) (1.0 x 10 super(-4) m super(3)/min of Ar). Uneven coatings and brittle fibres were formed at very high concentrations of CH sub(3)SiCl sub(3) (6 x 10 super(-4) m super(3)/min of Ar). The flow rates of CH sub(3)SiCl sub(3) and hydrogen were adjusted to get SiC fibre with smooth surface. The structure and morphology of SiC fibres were evaluated.