Compound semiconductor interfaces obtained by direct wafer bonding in hydrogen or forming gas

A technique of direct bonding wafers up to 6-inch diameter without mechanical load after being heated to elevated temperatures in H^sub 2^ or in non-flammable forming gas (5% H^sub 2^/95% N^sub 2^) was applied to GaAs and GaAs/GaP. Electron microscopy revealed crystallographic bond interfaces containing the typical dislocation network. The density of dislocations can be easily chosen below a limit adverse to electrical properties. Current-voltage characteristics of doped GaAs wafer pairs showed ohmic behavior of p-p and n-n junctions, whereas p-n diodes showed 2 to 3 V breakdown voltage as well as an ideality factor between 1.0 and 1.8.[PUBLICATION ABSTRACT]