Initial and degraded performance of thin film CdTe solar cell devices as a function of copper at the back contact
Copper performs an important role in obtaining high-performance thin-film CdTe solar cell devices . Both initial performance and performance after stress depends strongly on the total copper content at the back-contact, the Cd to Te ratio on the backside, the etching process, and the way the copper...
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Veröffentlicht in: | Thin solid films 2011-08, Vol.519 (21), p.7160-7163 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Copper performs an important role in obtaining high-performance thin-film CdTe solar cell devices
. Both initial performance and performance after stress depends strongly on the total copper content at the back-contact, the Cd to Te ratio on the backside, the etching process, and the way the copper is activated. With regard to getting high open circuit voltage a small amount of Cu seems sufficient upon the right anneal treatment. However, regarding open circuit voltage degradation for stressed devices there seems to be an optimum amount of Cu. Te-enrichment does not seem to have a big impact on device stability. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2011.01.134 |