Direct Observations of Retention Failure in Ferroelectric Memories

Direct Observations of Retention Failure in Ferroelectric Memories

Nonvolatile ferroelectric random‐access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswiching resulting...

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Veröffentlicht in:Advanced materials (Weinheim) 2012-02, Vol.24 (8), p.1106-1110
Hauptverfasser: Gao, Peng, Nelson, Christopher T., Jokisaari, Jacob R., Zhang, Yi, Baek, Seung-Hyub, Bark, Chung Wung, Wang, Enge, Liu, Yuanming, Li, Jiangyu, Eom, Chang-Beom, Pan, Xiaoqing
Format: Artikel
Sprache:eng
Schlagworte:
data retention failure
Domain walls
Electric fields
Electrical Equipment and Supplies
Failure
Ferroelectric materials
Ferroelectricity
ferroelectrics
Lead - chemistry
Oxides - chemistry
Polarization
polarization switching
Switching
Thin films
Titanium - chemistry
transmission electron microscopy
Zirconium - chemistry
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Zusammenfassung:Nonvolatile ferroelectric random‐access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswiching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201103983