Donor-Based Single Electron Pumps with Tunable Donor Binding Energy

We report on single electron pumping via a tunable number of individual donors. We use a device that essentially consists of a silicon nanowire with local arsenic implantation between a set of fine gates. A temperature-dependent characterization of the pumped current allows us to extract the ionizat...

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Veröffentlicht in:	Nano letters 2012-02, Vol.12 (2), p.763-768
Hauptverfasser:	Lansbergen, G. P, Ono, Y, Fujiwara, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Arsenic Arsenic - chemistry Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in multilayers, nanoscale materials and structures Electrons Exact sciences and technology Gates Implantation Ionization Medical devices Nanocrystalline materials Nanostructure Nanowires - chemistry Physics Pumps Silicon Silicon - chemistry Single electrons Thermodynamics
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Beschreibung
Zusammenfassung:	We report on single electron pumping via a tunable number of individual donors. We use a device that essentially consists of a silicon nanowire with local arsenic implantation between a set of fine gates. A temperature-dependent characterization of the pumped current allows us to extract the ionization energy of a single arsenic donor. We observe the ionization energy to be tunable by the gate electric field over a large range of energies.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl203709d