Properties of a silicon surface exposed to nanosecond laser-radiation pulses

Properties of a silicon surface exposed to nanosecond laser-radiation pulses

Results of the use of nanosecond laser pulses in the technology of production of very-large-scale integration circuits are presented. It is shown that, depending on the conditions of processing of silicon by these pulses, they can avoid mechanical failure of the silicon crystal lattice and form a ge...

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Veröffentlicht in:Journal of engineering physics and thermophysics 2008-05, Vol.81 (3), p.622-626
Hauptverfasser: Pilipenko, V. A., Vecher, D. V., Gorushko, V. A., Syakerskii, V. S., Petlitskaya, T. V.
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
Classical Mechanics
Cleaning
Complex Systems
Crystal lattices
Engineering
Engineering Thermodynamics
Gettering
Heat and Mass Transfer
Industrial Chemistry/Chemical Engineering
Lasers
Nanocomposites
Nanomaterials
Nanostructure
Silicon
Spectrum analysis
Thermodynamics
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Beschreibung
Zusammenfassung:Results of the use of nanosecond laser pulses in the technology of production of very-large-scale integration circuits are presented. It is shown that, depending on the conditions of processing of silicon by these pulses, they can avoid mechanical failure of the silicon crystal lattice and form a gettering layer that cleans the silicon from impurities.
ISSN:1062-0125
1573-871X
DOI:10.1007/s10891-008-0078-4