Spectroscopy and lasing of new mixed Nd-doped (Sc,Y)VO4 crystals

Spectroscopy and lasing of new mixed Nd-doped (Sc,Y)VO4 crystals

We report the first successful growth of Nd-doped Sc x Y 1− x VO 4 crystals (0< x ≤1) by the Czochralski technique. For a successful synthesis, the upper limit of the Sc concentration in the YVO 4 melt was found to be below 10 at%. The spectroscopic characterization of an Nd-doped laser crystal,...

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Veröffentlicht in:Applied physics. B, Lasers and optics Lasers and optics, 2010-04, Vol.99 (1-2), p.159-162
Hauptverfasser: Zagumennyi, A. I., Kutovoi, S. A., Sirotkin, A. A., Kutovoi, A. A., Vlasov, V. I., Iskhakova, L. D., Zavartsev, Y. D., Luthy, W., Feurer, T.
Format: Artikel
Sprache:eng
Schlagworte:
Crystals
Diodes
Engineering
Lasers
Lasing
Melts
Neodymium
Optical Devices
Optics
Photonics
Physical Chemistry
Physics
Physics and Astronomy
Quantum Optics
Scandium
Spectroscopy
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Zusammenfassung:We report the first successful growth of Nd-doped Sc x Y 1− x VO 4 crystals (0< x ≤1) by the Czochralski technique. For a successful synthesis, the upper limit of the Sc concentration in the YVO 4 melt was found to be below 10 at%. The spectroscopic characterization of an Nd-doped laser crystal, i.e., Nd:Sc 0.011 Y 1.003 V 0.986 O 3.986 , is discussed. Diode pumping of a c -cut crystal yielded an output power of 1.1 W at a wavelength of 1.06 μm with a slope efficiency of 43%: The slope efficiency of an a -cut crystal was 37%.
ISSN:0946-2171
1432-0649
DOI:10.1007/s00340-009-3841-0