Numerical analysis of 2D tunable HIS on GaAs support

Numerical analysis of 2D tunable HIS on GaAs support

Numerical analysis of the dispersion characteristics of a 2D tunable periodic structure in microstrip technology is presented. The high relative dielectric constant gallium-arsenide (GaAs) substrate hosts the embedded active FET switches, allowing dynamic changes in the propagation conditions of the...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2011-06, Vol.103 (3), p.779-782
Hauptverfasser: Matekovits, L., Heimlich, M., Esselle, K. P.
Format: Artikel
Sprache:eng
Schlagworte:
Active control
Characterization and Evaluation of Materials
Condensed Matter Physics
Dielectric constant
Gallium arsenide
Gallium arsenides
Machines
Manufacturing
Nanotechnology
Numerical analysis
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Surfaces and Interfaces
Thin Films
Two dimensional
Unit cell
Wave propagation
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Beschreibung
Zusammenfassung:Numerical analysis of the dispersion characteristics of a 2D tunable periodic structure in microstrip technology is presented. The high relative dielectric constant gallium-arsenide (GaAs) substrate hosts the embedded active FET switches, allowing dynamic changes in the propagation conditions of the electromagnetic wave. The position, the aperture of band-gaps and hence the value of the effective dielectric constant can be controlled. These effects will be monitored through the change of the scattering parameters for different numbers of repetition of the unit cell in the transverse direction.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-010-6211-1