An optimized 25.5-76.5 GHz PHEMT-based coplanar frequency tripler

This letter presents an optimized single-stage MMIC tripler with W-band output frequency (76.5 GHz). The circuit is based on an 0.15 μm gate-length AlGaAs/InGaAs/GaAs PHEMT. By using a class AB transistor bias point and carefully selecting its input and output terminations, a high conversion gain of...

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Veröffentlicht in:	IEEE microwave and guided wave letters 2000-06, Vol.10 (6), p.242-244
Hauptverfasser:	Campos-Roca, Y., Verweyen, L., Fernandez-Barciela, M., Sanchez, E., Curras-Francos, M. C., Bronner, W., Hulsmann, A., Schlechtweg, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Applied sciences Circuit properties Circuits Conversion Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Frequency Gain Gallium arsenide Indium gallium arsenide Indium gallium arsenides MESFETs Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves MMICs MODFET integrated circuits Noise levels Oscillators Physics Radiowave and microwave (including millimeter wave) technology Solid state circuits Varactors
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