An optimized 25.5-76.5 GHz PHEMT-based coplanar frequency tripler

This letter presents an optimized single-stage MMIC tripler with W-band output frequency (76.5 GHz). The circuit is based on an 0.15 μm gate-length AlGaAs/InGaAs/GaAs PHEMT. By using a class AB transistor bias point and carefully selecting its input and output terminations, a high conversion gain of...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE microwave and guided wave letters 2000-06, Vol.10 (6), p.242-244
Hauptverfasser:	Campos-Roca, Y., Verweyen, L., Fernandez-Barciela, M., Sanchez, E., Curras-Francos, M. C., Bronner, W., Hulsmann, A., Schlechtweg, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Applied sciences Circuit properties Circuits Conversion Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Frequency Gain Gallium arsenide Indium gallium arsenide Indium gallium arsenides MESFETs Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves MMICs MODFET integrated circuits Noise levels Oscillators Physics Radiowave and microwave (including millimeter wave) technology Solid state circuits Varactors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	This letter presents an optimized single-stage MMIC tripler with W-band output frequency (76.5 GHz). The circuit is based on an 0.15 μm gate-length AlGaAs/InGaAs/GaAs PHEMT. By using a class AB transistor bias point and carefully selecting its input and output terminations, a high conversion gain of -4.3 dB for an 8.5 dBm input signal and a saturated output power of 7 dBm have been obtained. To our knowledge, these results represent the best performance reported up to date for an active frequency tripler with W-band output frequency.
ISSN:	1051-8207 2771-957X 1558-2329 2771-9588
DOI:	10.1109/75.852429