An optimized 25.5-76.5 GHz PHEMT-based coplanar frequency tripler
This letter presents an optimized single-stage MMIC tripler with W-band output frequency (76.5 GHz). The circuit is based on an 0.15 μm gate-length AlGaAs/InGaAs/GaAs PHEMT. By using a class AB transistor bias point and carefully selecting its input and output terminations, a high conversion gain of...
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| Veröffentlicht in: | IEEE microwave and guided wave letters 2000-06, Vol.10 (6), p.242-244 |
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| container_title | IEEE microwave and guided wave letters |
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| creator | Campos-Roca, Y. Verweyen, L. Fernandez-Barciela, M. Sanchez, E. Curras-Francos, M. C. Bronner, W. Hulsmann, A. Schlechtweg, M. |
| description | This letter presents an optimized single-stage MMIC tripler with W-band output frequency (76.5 GHz). The circuit is based on an 0.15 μm gate-length AlGaAs/InGaAs/GaAs PHEMT. By using a class AB transistor bias point and carefully selecting its input and output terminations, a high conversion gain of -4.3 dB for an 8.5 dBm input signal and a saturated output power of 7 dBm have been obtained. To our knowledge, these results represent the best performance reported up to date for an active frequency tripler with W-band output frequency. |
| doi_str_mv | 10.1109/75.852429 |
| format | Article |
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C. ; Bronner, W. ; Hulsmann, A. ; Schlechtweg, M.</creator><creatorcontrib>Campos-Roca, Y. ; Verweyen, L. ; Fernandez-Barciela, M. ; Sanchez, E. ; Curras-Francos, M. C. ; Bronner, W. ; Hulsmann, A. ; Schlechtweg, M.</creatorcontrib><description>This letter presents an optimized single-stage MMIC tripler with W-band output frequency (76.5 GHz). The circuit is based on an 0.15 μm gate-length AlGaAs/InGaAs/GaAs PHEMT. By using a class AB transistor bias point and carefully selecting its input and output terminations, a high conversion gain of -4.3 dB for an 8.5 dBm input signal and a saturated output power of 7 dBm have been obtained. To our knowledge, these results represent the best performance reported up to date for an active frequency tripler with W-band output frequency.</description><identifier>ISSN: 1051-8207</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-2329</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/75.852429</identifier><identifier>CODEN: IMGLE3</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum gallium arsenides ; Applied sciences ; Circuit properties ; Circuits ; Conversion ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Frequency ; Gain ; Gallium arsenide ; Indium gallium arsenide ; Indium gallium arsenides ; MESFETs ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwaves ; MMICs ; MODFET integrated circuits ; Noise levels ; Oscillators ; Physics ; Radiowave and microwave (including millimeter wave) technology ; Solid state circuits ; Varactors</subject><ispartof>IEEE microwave and guided wave letters, 2000-06, Vol.10 (6), p.242-244</ispartof><rights>2000 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2000</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c396t-2d400c670ec53a211ff13a35eacdf3199e2e3f0706e573814e52c424165554373</citedby><cites>FETCH-LOGICAL-c396t-2d400c670ec53a211ff13a35eacdf3199e2e3f0706e573814e52c424165554373</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/852429$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/852429$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1446014$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Campos-Roca, Y.</creatorcontrib><creatorcontrib>Verweyen, L.</creatorcontrib><creatorcontrib>Fernandez-Barciela, M.</creatorcontrib><creatorcontrib>Sanchez, E.</creatorcontrib><creatorcontrib>Curras-Francos, M. C.</creatorcontrib><creatorcontrib>Bronner, W.</creatorcontrib><creatorcontrib>Hulsmann, A.</creatorcontrib><creatorcontrib>Schlechtweg, M.</creatorcontrib><title>An optimized 25.5-76.5 GHz PHEMT-based coplanar frequency tripler</title><title>IEEE microwave and guided wave letters</title><addtitle>MGWL</addtitle><description>This letter presents an optimized single-stage MMIC tripler with W-band output frequency (76.5 GHz). The circuit is based on an 0.15 μm gate-length AlGaAs/InGaAs/GaAs PHEMT. By using a class AB transistor bias point and carefully selecting its input and output terminations, a high conversion gain of -4.3 dB for an 8.5 dBm input signal and a saturated output power of 7 dBm have been obtained. To our knowledge, these results represent the best performance reported up to date for an active frequency tripler with W-band output frequency.</description><subject>Aluminum gallium arsenides</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Conversion</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Gain</subject><subject>Gallium arsenide</subject><subject>Indium gallium arsenide</subject><subject>Indium gallium arsenides</subject><subject>MESFETs</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>MMICs</subject><subject>MODFET integrated circuits</subject><subject>Noise levels</subject><subject>Oscillators</subject><subject>Physics</subject><subject>Radiowave and microwave (including millimeter wave) technology</subject><subject>Solid state circuits</subject><subject>Varactors</subject><issn>1051-8207</issn><issn>2771-957X</issn><issn>1558-2329</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkU1Lw0AQhoMoWKsHr56CiOIhcb9mP46lVCtU9FDPYd1OICVN4m57aH-9W1IUPIinGZhnHmZ4k-SSkpxSYh4U5BqYYOYoGVAAnTHOzHHsCdBMM6JOk7MQloRQAZwMktGoSdtuXa2qHS5SBjlkSuaQPk136dt08jLPPmyIE9d2tW2sT0uPnxts3DZd-6qr0Z8nJ6WtA14c6jB5f5zMx9Ns9vr0PB7NMseNXGdsIQhxUhF0wC2jtCwptxzQukXJqTHIkJdEEYmguKYCgTnBBJUAILjiw-Su93a-jReEdbGqgsM6noXtJhQmOoRQwCN5-yfJlNTUMP0fkDMh98brX-Cy3fgmvltoLbSRiu6h-x5yvg3BY1l0vlpZvy0oKfbhFAqKPpzI3hyENjhbl942rgo_C0LImFDErnqsQsTv6cHxBXMckMM</recordid><startdate>20000601</startdate><enddate>20000601</enddate><creator>Campos-Roca, Y.</creator><creator>Verweyen, L.</creator><creator>Fernandez-Barciela, M.</creator><creator>Sanchez, E.</creator><creator>Curras-Francos, M. C.</creator><creator>Bronner, W.</creator><creator>Hulsmann, A.</creator><creator>Schlechtweg, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope><scope>7U5</scope></search><sort><creationdate>20000601</creationdate><title>An optimized 25.5-76.5 GHz PHEMT-based coplanar frequency tripler</title><author>Campos-Roca, Y. ; Verweyen, L. ; Fernandez-Barciela, M. ; Sanchez, E. ; Curras-Francos, M. C. ; Bronner, W. ; Hulsmann, A. ; Schlechtweg, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c396t-2d400c670ec53a211ff13a35eacdf3199e2e3f0706e573814e52c424165554373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Aluminum gallium arsenides</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Circuits</topic><topic>Conversion</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>Gain</topic><topic>Gallium arsenide</topic><topic>Indium gallium arsenide</topic><topic>Indium gallium arsenides</topic><topic>MESFETs</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwaves</topic><topic>MMICs</topic><topic>MODFET integrated circuits</topic><topic>Noise levels</topic><topic>Oscillators</topic><topic>Physics</topic><topic>Radiowave and microwave (including millimeter wave) technology</topic><topic>Solid state circuits</topic><topic>Varactors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Campos-Roca, Y.</creatorcontrib><creatorcontrib>Verweyen, L.</creatorcontrib><creatorcontrib>Fernandez-Barciela, M.</creatorcontrib><creatorcontrib>Sanchez, E.</creatorcontrib><creatorcontrib>Curras-Francos, M. C.</creatorcontrib><creatorcontrib>Bronner, W.</creatorcontrib><creatorcontrib>Hulsmann, A.</creatorcontrib><creatorcontrib>Schlechtweg, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE microwave and guided wave letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Campos-Roca, Y.</au><au>Verweyen, L.</au><au>Fernandez-Barciela, M.</au><au>Sanchez, E.</au><au>Curras-Francos, M. C.</au><au>Bronner, W.</au><au>Hulsmann, A.</au><au>Schlechtweg, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An optimized 25.5-76.5 GHz PHEMT-based coplanar frequency tripler</atitle><jtitle>IEEE microwave and guided wave letters</jtitle><stitle>MGWL</stitle><date>2000-06-01</date><risdate>2000</risdate><volume>10</volume><issue>6</issue><spage>242</spage><epage>244</epage><pages>242-244</pages><issn>1051-8207</issn><issn>2771-957X</issn><eissn>1558-2329</eissn><eissn>2771-9588</eissn><coden>IMGLE3</coden><abstract>This letter presents an optimized single-stage MMIC tripler with W-band output frequency (76.5 GHz). The circuit is based on an 0.15 μm gate-length AlGaAs/InGaAs/GaAs PHEMT. By using a class AB transistor bias point and carefully selecting its input and output terminations, a high conversion gain of -4.3 dB for an 8.5 dBm input signal and a saturated output power of 7 dBm have been obtained. To our knowledge, these results represent the best performance reported up to date for an active frequency tripler with W-band output frequency.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/75.852429</doi><tpages>3</tpages></addata></record> |
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| subjects | Aluminum gallium arsenides Applied sciences Circuit properties Circuits Conversion Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Frequency Gain Gallium arsenide Indium gallium arsenide Indium gallium arsenides MESFETs Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves MMICs MODFET integrated circuits Noise levels Oscillators Physics Radiowave and microwave (including millimeter wave) technology Solid state circuits Varactors |
| title | An optimized 25.5-76.5 GHz PHEMT-based coplanar frequency tripler |
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