Microstructured silicon created with a nanosecond neodymium-doped yttrium aluminum garnet laser

We produce microstructured silicon using frequency doubled, nanosecond Nd:YAG pulses in SF 6 gas. The micro-penitentes formed are up to 20 μm tall with a sulfur concentration of 0.5% near the surface. The infrared absorption is increased to near unity and extends well below the original bandgap far...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2011-08, Vol.104 (2), p.755-758
Hauptverfasser:	Mandeville, W. J., Shaffer, M. K., Lu, Yalin, O’Keefe, D., Knize, R. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Condensed Matter Physics Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Economics Exact sciences and technology Excimer lasers Infrared absorption Machines Manufacturing Materials science Nanocomposites Nanomaterials Nanostructure Nanotechnology Optical and Electronic Materials Physical radiation effects, radiation damage Physics Physics and Astronomy Processes Silicon Structure of solids and liquids crystallography Sulfur Surface treatments Surfaces and Interfaces Thin Films Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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Zusammenfassung:	We produce microstructured silicon using frequency doubled, nanosecond Nd:YAG pulses in SF 6 gas. The micro-penitentes formed are up to 20 μm tall with a sulfur concentration of 0.5% near the surface. The infrared absorption is increased to near unity and extends well below the original bandgap far into the infrared. These data are similar to results reported by others using more complicated and less economical femtosecond titanium sapphire and picosecond and nanosecond excimer lasers.
ISSN:	0947-8396 1432-0630
DOI:	10.1007/s00339-011-6346-8