Effect of H2S treatment on properties of CuInS2 thin films deposited by chemical spray pyrolysis at low temperature

Effect of H2S treatment on properties of CuInS2 thin films deposited by chemical spray pyrolysis at low temperature

CuInS2 thin films were deposited by chemical spray of aqueous solutions containing CuCl2, InCl3 and thiourea at substrate temperature of 250 degree C in air and subjected to annealing at 530 degree C in H2S atmosphere. Structure and composition before and after annealing were studied by XRD, EDS, XP...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Thin solid films 2011-08, Vol.519 (21), p.7180-7183
Hauptverfasser: KÄRBER, E, KATERSKI, A, OJA ACIK, I, MIKLI, V, MERE, A, KRUNKS, M
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied sciences
Chalcopyrite
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Deposition
Energy
Exact sciences and technology
Film thickness
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Natural energy
Oxygen content
Photovoltaic conversion
Physics
Solar cells. Photoelectrochemical cells
Solar energy
Sprays
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Theory and models of film growth
Thin film structure and morphology
Thin films
X-ray photoelectron spectroscopy
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:CuInS2 thin films were deposited by chemical spray of aqueous solutions containing CuCl2, InCl3 and thiourea at substrate temperature of 250 degree C in air and subjected to annealing at 530 degree C in H2S atmosphere. Structure and composition before and after annealing were studied by XRD, EDS, XPS and Raman spectroscopy. As-sprayed films were low-crystalline, showed uniform distribution of elements in film thickness and no oxygen content. For the CuInS2 films deposited from the solutions with [Cu2+]/[In3+]=1.0 and 1.1, H2S treatment for 30min increased the chalcopyrite content up to 73% and 51%, respectively. CuXS phase in sprayed CIS films promotes the crystallite growth but retards the formation of chalcopyrite phase during H2S treatment.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.12.185