Photodoping with CdSe nanocrystals as a tool to probe trap-state distributions in C60 crystals

Optical injection of electrons from CdSe nanocrystals into amorphous semiconductors can be used to optically control the electron density in trap-rich conduction bands. For the specific example of polycrystalline C 60 , we show that important parameters of the density of trap states below the mobili...

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Veröffentlicht in:	Applied physics. B, Lasers and optics Lasers and optics, 2008-10, Vol.93 (1), p.239-243
Hauptverfasser:	Biebersdorf, A., Dietmüller, R., Ohlinger, A., Klar, T. A., Feldmann, J., Talapin, D. V., Weller, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Buckminsterfullerene Cadmium selenides Density Electron density Engineering Fullerenes Intermetallics Lasers Nanocrystals Optical Devices Optics Photonics Physical Chemistry Physics Physics and Astronomy Quantum Optics
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Beschreibung
Zusammenfassung:	Optical injection of electrons from CdSe nanocrystals into amorphous semiconductors can be used to optically control the electron density in trap-rich conduction bands. For the specific example of polycrystalline C 60 , we show that important parameters of the density of trap states below the mobility edge can be retrieved.
ISSN:	0946-2171 1432-0649
DOI:	10.1007/s00340-008-3143-y