29-mm super(2), 1.8-V-only, 16-Mb DINOR flash memory with gate-protected-poly-diode (GPPD) charge pump

A 29-mm super(2), 16-Mb divided bitline NOR (DINOR) is fabricated using 0.25- mu m triple-well three-layer-metal technology. Read access time is 72 ns at 1.8 V. A poly diode charge-pump technique improves pump efficiency and eliminates the body effect problem.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE journal of solid-state circuits 1999-11, Vol.34 (11), p.1551-1556
Hauptverfasser:	Miyawaki, Yoshikazu, Ishizaki, Osamu, Okihara, Yoshihiko, Inaba, Tsutomu, Nitta, Fumihiko, Mihara, Masaaki, Hayasaka, Takashi, Kobayashi, Kazuo, Omae, Tadashi, Kimura, Hiroshi, Shimizu, Satoshi, Makimoto, Hiromi, Kawajiri, Yoshiki, Wada, Masashi, Sonoyama, Hirofumi, Etoh, Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	Access time Charge pumps Circuits CMOS Diodes Flash memory (computers) Pumps
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A 29-mm super(2), 16-Mb divided bitline NOR (DINOR) is fabricated using 0.25- mu m triple-well three-layer-metal technology. Read access time is 72 ns at 1.8 V. A poly diode charge-pump technique improves pump efficiency and eliminates the body effect problem.
ISSN:	0018-9200
DOI:	10.1109/4.799862