A fully matched high linearity 2-W PHEMT MMIC power amplifier for 3.5 GHz applications

A 2-W monolithic microwave integrated circuit power amplifier, operating between 3.3 and 3.8GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electronic mobility transistor for the applications of wideband code division multiple access, wireless local loop, and multichannel multipoint distri...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2005-10, Vol.15 (10), p.667-669
Hauptverfasser:	Chen-Kuo Chu, Hou-Kuei Huang, Hong-Zhi Liu, Chiu, R.-J., Che-Hung Lin, Chih-Cheng Wang, Mau-Phon Houng, Yeong-Her Wang, Chuan-Chien Hsu, Wang Wu, Chang-Luen Wu, Chian-Sern Chang
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Amplifiers Application specific integrated circuits Applied sciences Broadband amplifiers Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gallium arsenide Gallium arsenides High power amplifiers Linearity Microwave amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwave integrated circuits Microwaves MMICs Monolithic integrated circuits Monolithic microwave integrated circuit (MMIC) PHEMTs power amplifier (PA) Power amplifiers pseudomorphic high electronic mobility transistor (PHEMT) wideband code division multiple access (W-CDMA)
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Beschreibung
Zusammenfassung:	A 2-W monolithic microwave integrated circuit power amplifier, operating between 3.3 and 3.8GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electronic mobility transistor for the applications of wideband code division multiple access, wireless local loop, and multichannel multipoint distribution service, is demonstrated. This two-stage amplifier is designed to fully match 50/spl Omega/ input and output impedances. With a dual-bias configuration, the amplifier possesses the characteristics of 30.4dB small-signal gain and 34dBm 1-dB gain compression power with 37.1% power added efficiency. Moreover, with a single carrier output power level of 24dBm, high linearity with a 43.5-dBm third-order intercept point operating at 3.5GHz is also achieved.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2005.856852