Formation and photoluminescence properties of amorphous silicon oxide nanowires

The silicon oxide nanowires (SiOxNWs) were grown by the thermal process of nickel (Ni) nanoparticles (NPs) deposited on silicon (Si) wafers in mixed gasses of nitrogen (N 2) and hydrogen (H 2) at temperatures of 900, 1000, and 1100 °C. Each NW was about 20–100 nm in diameter embedding with Ni NPs inside, and its structure was amorphous. The ratio of Si and oxygen (O) was 1:2.18. Blue emission spectrum was observed at the wavelength of 450 nm and the peak intensity increased with the increasing process temperature.