Hole distribution in InGaAsP 1.3-μm multiple-quantum-well laser structures with different hole confinement energies

Hole distribution in InGaAsP 1.3-μm multiple-quantum-well laser structures with different hole confinement energies

We have investigated the hole distribution in strained InGaAsP multiple-quantum-well (MQW) structures by direct hole transport measurements with time-resolved photoluminescence spectroscopy. The results show that the hole transport time over the MQW primarily depends on the hole confinement energy i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of quantum electronics 1999-04, Vol.35 (4), p.603-607
Hauptverfasser: SILFVENIUS, C, LANDGREN, G, MARCINKEVICIUS, S
Format: Artikel
Sprache:eng
Schlagworte:
Confinement
Energy distribution
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Hole distribution
Lasers
Optics
Physics
Quantum electronics
Semiconductor lasers
laser diodes
Spectroscopy
Thermionic emission
Transport
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have investigated the hole distribution in strained InGaAsP multiple-quantum-well (MQW) structures by direct hole transport measurements with time-resolved photoluminescence spectroscopy. The results show that the hole transport time over the MQW primarily depends on the hole confinement energy in the wells and increases sharply with the well depth. A simple thermionic emission model indicates that the heavy holes escape predominantly over the light-hole barrier edge for strain-compensated MQW structures. The results are corroborated with observed laser performance data
ISSN:0018-9197
1558-1713
DOI:10.1109/3.753665