In situ-doped amorphous Si sub(0.8)C sub(0.2) emitter bipolar transistors
The fabrication and characterization of in situ-doped amorphous Si sub(0.8)C sub(0.2) emitter transistors are presented. Emitter Gummel numbers exceeding 10 super(14) s/cm super(4) are reported for the first time in this type of structure. The high values obtained for G sub(E) are believed to be due...
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| Veröffentlicht in: | IEEE electron device letters 1999-11, Vol.20 (11), p.592-594 |
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| container_issue | 11 |
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| container_title | IEEE electron device letters |
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| creator | Orpella, A Bardes, D Alcubilla, R Marsal, L F Pallares, J |
| description | The fabrication and characterization of in situ-doped amorphous Si sub(0.8)C sub(0.2) emitter transistors are presented. Emitter Gummel numbers exceeding 10 super(14) s/cm super(4) are reported for the first time in this type of structure. The high values obtained for G sub(E) are believed to be due to the valance band discontinuity between the Si sub(0.8)C sub(0.2) layer and the crystalline part of the emitter, which effectively blocks the minority carrier injection from the base into the noncrystalline part of the emitter. |
| doi_str_mv | 10.1109/55.798054 |
| format | Article |
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Emitter Gummel numbers exceeding 10 super(14) s/cm super(4) are reported for the first time in this type of structure. The high values obtained for G sub(E) are believed to be due to the valance band discontinuity between the Si sub(0.8)C sub(0.2) layer and the crystalline part of the emitter, which effectively blocks the minority carrier injection from the base into the noncrystalline part of the emitter.</description><identifier>ISSN: 0741-3106</identifier><identifier>DOI: 10.1109/55.798054</identifier><language>eng</language><subject>Crystal structure ; Devices ; Discontinuity ; Emittance ; Emitters (electron) ; Germanium ; Minority carriers ; Semiconductor devices</subject><ispartof>IEEE electron device letters, 1999-11, Vol.20 (11), p.592-594</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Orpella, A</creatorcontrib><creatorcontrib>Bardes, D</creatorcontrib><creatorcontrib>Alcubilla, R</creatorcontrib><creatorcontrib>Marsal, L F</creatorcontrib><creatorcontrib>Pallares, J</creatorcontrib><title>In situ-doped amorphous Si sub(0.8)C sub(0.2) emitter bipolar transistors</title><title>IEEE electron device letters</title><description>The fabrication and characterization of in situ-doped amorphous Si sub(0.8)C sub(0.2) emitter transistors are presented. 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Emitter Gummel numbers exceeding 10 super(14) s/cm super(4) are reported for the first time in this type of structure. The high values obtained for G sub(E) are believed to be due to the valance band discontinuity between the Si sub(0.8)C sub(0.2) layer and the crystalline part of the emitter, which effectively blocks the minority carrier injection from the base into the noncrystalline part of the emitter.</abstract><doi>10.1109/55.798054</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1999-11, Vol.20 (11), p.592-594 |
| issn | 0741-3106 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Crystal structure Devices Discontinuity Emittance Emitters (electron) Germanium Minority carriers Semiconductor devices |
| title | In situ-doped amorphous Si sub(0.8)C sub(0.2) emitter bipolar transistors |
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