In situ-doped amorphous Si sub(0.8)C sub(0.2) emitter bipolar transistors

In situ-doped amorphous Si sub(0.8)C sub(0.2) emitter bipolar transistors

The fabrication and characterization of in situ-doped amorphous Si sub(0.8)C sub(0.2) emitter transistors are presented. Emitter Gummel numbers exceeding 10 super(14) s/cm super(4) are reported for the first time in this type of structure. The high values obtained for G sub(E) are believed to be due...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1999-11, Vol.20 (11), p.592-594
Hauptverfasser: Orpella, A, Bardes, D, Alcubilla, R, Marsal, L F, Pallares, J
Format: Artikel
Sprache:eng
Schlagworte:
Crystal structure
Devices
Discontinuity
Emittance
Emitters (electron)
Germanium
Minority carriers
Semiconductor devices
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The fabrication and characterization of in situ-doped amorphous Si sub(0.8)C sub(0.2) emitter transistors are presented. Emitter Gummel numbers exceeding 10 super(14) s/cm super(4) are reported for the first time in this type of structure. The high values obtained for G sub(E) are believed to be due to the valance band discontinuity between the Si sub(0.8)C sub(0.2) layer and the crystalline part of the emitter, which effectively blocks the minority carrier injection from the base into the noncrystalline part of the emitter.
ISSN:0741-3106
DOI:10.1109/55.798054